Time-resolved photoluminescence studies of Al x Ga 1x N alloys

Effects of alloy disorder on the transport properties of Al x Ga 1x N epilayers probed by persistent photoconductivity

Recent Advances in III-Nitride Ultraviolet Photonic Materials and Devices

This paper summarizes some of the recent advances made on III-nitride ultraviolet photonics materials and devices. In particular, the growth and characterization of AlGaN alloys are discussed in detail. It was shown that AlGaN could be made n-type for x up to 1 (pure AlN). Time-resolved photoluminescence (PL) studies carried out on these materials have shown that Si-doping reduces the effect of...

Bound Exciton Transfer in Weakly Disordered Systems : Iii-v Alloys

Transfer mechanisms of N-bound excitons in Ga*In,_xP:N and GaAs,.xPx:N alloys are studied as a function of temperature using picosecond time resolved photoluminescence. The results, direct exciton tunneling between localized states and multiple trapping via free excitons, are different from those seen in the binary GaP:N. Thus, we demonstrate the importance of alloy disorder on the exciton dyna...

Time Resolved Photoluminescence of Si-doped High Al Mole Fraction AlGaN Epilayers Grown by Plasma-Enhanced Molecular Beam Epitaxy

We report on detailed temperature dependent, time-resolved photoluminescence (TRPL) studies of Si-doped AlGaN epilayers. In these samples, the Al concentration varies from 25% to 66%. The samples were found to exhibit metallic-like temperature-independent conductivity. The deep level "yellow" emission, whose presence would indicate the existence of a large number of defects associated with grow...

ITT-Nitride Ultraviolet Photonic Materials — Epitaxial Growth, Optical and Electrical Properties, and Applications

This paper summarizes some of the recent advances made by our group on the growth, characterization and applications of A1GaN alloys with high Al contents. Recently, our group has achieved highly conductive n-type AlxGal-xN for x as high as 0.7 (a resistivity value as low as 0.15 ohm-cm has been achieved). Prior to this, only insulating AlxGal-xN (x > 0.5) can be obtained. Our success is largel...